Procédé pour la formation d'un matériau monocristal

Verfahren zur Bildung eines Einkristall-Materials

Method of forming a single crystal material

Abstract

A method of growing an epitaxial like, single crystal, superconducting film (28) by promoting the epitaxial-like growth of film from a single nucleation site (24) in deference to substantially all other nucleation sites (29) on the substrate (14). The present invention contemplates the use of a mask (18) to systematically expose sections of the substrate (14) to the deposition apparatus. This mask (18) may include an adjustable or fixed aperture (20B) and is manipulated as herein described to systematically expose areas of the substrate (14) to the deposition plasma (12).

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Patent Citations (2)

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    EP-0057587-A2August 11, 1982Xerox CorporationVerfahren zum Niederschlagen von Halbleitern
    FR-2626110-A1July 21, 1989Thomson CsfProcess for producing a layer of a superconductive material by epitaxy

NO-Patent Citations (1)

    Title
    DATABASE WPIL, no. 89-118 136 DERWENT PUBLICATIONS LTD. London, GB

Cited By (7)

    Publication numberPublication dateAssigneeTitle
    EP-0581254-A1February 02, 1994Sumitomo Electric Industries, Limited, The Tokyo Electric Power Co., Inc.Verfahren zur Herstellung eines einkristallinen Dünnfilmes
    EP-0669411-A2August 30, 1995Sumitomo Electric Industries, LimitedVerfahren zur Herstellung eines einkristallinen dunnen Filmes
    EP-0669411-A3November 19, 1997Sumitomo Electric Industries, LimitedVerfahren zur Herstellung eines einkristallinen dunnen Filmes
    US-5372089-ADecember 13, 1994Sumitomo Electric Industries, Ltd., The Tokyo Electric Power Company IncorporatedMethod of forming single-crystalline thin film
    US-8956952-B2February 17, 2015Tivra CorporationMultilayer substrate structure and method of manufacturing the same
    US-9487885-B2November 08, 2016Tivra CorporationSubstrate structures and methods
    WO-2013188574-A3May 08, 2014Tivra CorporationMultilayer substrate structure