layers (Total 42097 Patents Found)

A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a first mask that includes a first array of openings therein and growing the underlying gallium nitride layer through the first array of openings and onto the first mask, to thereby form a first overgrown gallium nit...
A method of manufacturing a semiconductor device having a monocrystalline substrate and a plurality of epitaxial layers successively deposited on the substrate is disclosed. The device is manufactured by successively contacting the substrate with solutions which are previously saturated by contact with a plurality of a...
A field emission display panel device that incorporates carbon nanotube emitter layers for emitting electrons wherein the carbon nanotube layers has a smaller width than the conductive paste layers it is deposited on is disclosed. The width of the carbon nanotube layer should be less than ¾ of the width of the conduct...
A method is described comprising forming an insulating polycrystalline seed layer in a first chamber by reactively pulsed DC magnetron sputtering, then forming an insulating amorphous-like seed layer in a second chamber by reactively pulsed DC magnetron sputtering, then forming a conducting seed layer and a ferromagnet...
Instantiation of tiered software applications running on an Internet or Intranet computer system, including a method of instantiation and a program product for instantiation. The method, and program product are particularly useful in instantiation of multi-tiered applications having a user interface tier on the client,...
Method and apparatus for applying a plurality of superposed layers to a web by curtain coating in which only some of the plurality of layers are, and in the extreme case only one layer is, in contact with the curtain guides. The width of the remaining layers is smaller than the width determined by the curtain guides, a...
A method for forming within a dielectric layer upon a substrate within a microelectronics fabrication a series of contact via holes etched through the dielectric layer to multi-level contact layers employing reactive plasma etching methods to form the series of contact via holes. The first plasma etch method employs fl...
An enhanced halogenated plasma for ion-assisted plasma etches to which silicon tetrabromide has been added to retard erosion, flowing and reticulation of photoresist, particularly during an etch of an aluminum or tungsten metal layer. The added resistance to erosion, flowing and reticulation is greater than that achiev...
Methods of forming a metal interconnects include forming an electrically insulating layer having a contact hole therein, on a substrate. A step is also performed to form an electrically conductive seed layer. The seed layer extends on a sidewall of the contact hole and on a portion of an upper surface of the electrical...
Modeling a plurality of fabric layers on a subject to predict thermal strain. The computerized model combines subject data, fabric data, and environmental conditions to simulate the thermal comfort of the subject over time. In an embodiment, a user interface enables a user to modify or define the input data to compare ...
A method for producing an electrode pattern in a conductive polymer disposed on a substrate, the method comprising the steps of: applying a layer containing a conductive polymer on a substrate; and printing a pattern on said layer using a printing solution containing a conductivity enhancing agent such that the resisti...
The present invention is directed to golf balls consisting of a dual-layer core and a cover. The core consists of a layer formed from a relatively soft HNP composition and a layer formed from a relatively hard HNP composition. The relatively soft HNP composition has a material hardness of 55 Shore D or less and compris...
The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate ( 5 ), which is situated inside a process chamber ( 2 ) of a reactor ( 1 ) while being supported by a substrate holder ( 4 ). The layer is comprised of at least two material co...
A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohm...
Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing ef...
A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a Ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the Ge-containing film at a higher rate...
Oxide electron selective contacts for perovskite solar cells are provided. In one aspect, a method of forming a perovskite solar cell is provided. The method includes the steps of: depositing a layer of a hole transporting material on a substrate; forming a perovskite absorber on the hole transporting material; deposit...
Multi-piece golf balls containing a multi-layered core structure having layers with different hardness gradients and specific gravities are provided. The core structure includes a small, heavy inner core (center) having a relatively high specific gravity with metal material preferably dispersed in a first thermoset com...
A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having multiple single-crystal layers, including at least a first layer and a second layer that is formed over and tilted relative to the first layer. The X-rays that are diffracted from each of the first and second layers...
A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the hol...
According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer s...
A flow battery includes an electrode operable to be wet by a solution having a reversible redox couple reactant. In one embodiment, the electrode can have plurality of micro and macro pores, wherein the macro pores have a size at least one order of magnitude greater than a size of the micro pores. In another embodiment...
Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process ...
A thin film composite (TFC) forward osmosis (FO) membrane includes a porous support with surfaces having thereon a hydrophilic self-assembled monolayer. An active layer on the support is sufficiently dense to remove an ionic species from a liquid....
A method of partially imaging a substrate, for example glass, with a print pattern comprising layers of ceramic ink in substantially exact registration. The method relies on a mask ink layer defining the print pattern and differential thermal expulsion of ceramic ink medium during a heat fusing process between the area...
A method for manufacturing a structure implementing temporary bonding a substrate to be handled with a handle substrate, including: providing the substrate to be handled covered with a first metal layer, the first layer having a first grain size; providing the handle substrate covered with a second metal layer, the sec...
Semiconductor devices comprising a getter material are described. The getter material can be located in or over the active region of the device and/or in or over a termination region of the device. The getter material can be a conductive or an insulating material. The getter material can be present as a continuous or d...
A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for remo...
The aim of the invention is to devise a method for selectively activating photocatalytic layers wherein the activation process can be carried out individually and as needed using simple means, while the photocatalytic effect is created optimally and the emission of light associated therewith is adapted to ambient condi...
L'invention concerne des articles d'emballage multicouches comprenant (i) une couche de liaison de piégeage d'oxygène, comprenant un acide polypropylène-greffé-acrylique (PP-g-AA), un anhydride polypropylène-greffé-maléique (PP-g-MA) ou un de ses mélanges ; (ii) une deuxième couche ; et (iii) une t...
A composition comprising a first dispersion of lipid vesicles capable of entering the deep layers of the skin and containing at least one first active substance capable of treating these deep layers, and a second dispersion of lipid vesicles capable of entering the surface layers of the skin and containing at least one...
Provided is a lithographic printing plate comprising a support substrate having disposed thereon an ablative-absorbing layer and, optionally, a durable, ink-accepting surface layer that is not ablative-absorbing. The ablative-absorbing layer contains a high weight percent of an organic sulfonic acid component. The prin...
The present invention provides a means of fabricating a reliable C4 flip-chip structure for low-temperature joining. The electrochemically fabricated C4 interconnection has a barrier layer between the electroplated tin-rich solder bump and the ball-limiting metallurgy that protects the terminal metal in the ball-limiti...
A metal layer ( 7 ), a metallic compound layer ( 8 ) and a metal layer ( 9 ) are stacked in this order when viewed from the side of a first copper interconnect line ( 2 ) and an interlayer insulating film ( 5 ) to constitute a second conductive barrier layer ( 20 ). As the material for the metal layers ( 7 ) and ( 9 ),...
An ohmic contact structure for connection of a metal electrode to a highly integrated semiconductor device and a method for making the same. A contact hole is selectively formed in an insulating layer. A contact structure of a hetero-junction of Ge and Si 1-x Ge x whose bandgap is lower than that of the underlying su...